DocumentCode
1181956
Title
Control of parallel conduction in MOVPE grown InP based HFETs
Author
Spurdens, P.C. ; Newson, D.J.
Author_Institution
BT&D Technol. Ltd., Ipswich
Volume
30
Issue
17
fYear
1994
fDate
8/18/1994 12:00:00 AM
Firstpage
1453
Lastpage
1455
Abstract
Several methods for controlling the parallel conduction path at the substrate interface in InP-based HFETs have been investigated. A novel combination of substrate annealing, gas phase etching and semi-insulating buffer layer is shown to provide the most reliable solution to this problem
Keywords
III-V semiconductors; annealing; etching; field effect transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; HFETs; InP; MOVPE; gas phase etching; parallel conduction path; semi-insulating buffer layer; substrate annealing; substrate interface;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940985
Filename
326271
Link To Document