Title :
Fabrication of 2-D photonic bandgap structures in GaAs/AlGaAs
Author :
Krauss, T. ; Thoms, S. ; Wilkinson, C.D.W. ; DeLaRue, R.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ.
fDate :
8/18/1994 12:00:00 AM
Abstract :
The authors report the first realisation of a two-dimensional photonic bandgap structure with a period of λ0/2n in the GaAs/AlGaAs material system. The structure consists of a honeycomb lattice with a wall thickness of ~30 nm and a period of 160 nm. It was found that, to realise patterns of such small size and periodicity, it is crucial to control the shape of the exposed features
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical constants; optical waveguides; semiconductor lasers; 2D photonic bandgap structures; GaAs-AlGaAs; GaAs/AlGaAs; exposed features; honeycomb lattice; periodicity; shape control; wall thickness;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940987
