Study of Random Dopant Fluctuation Induced Variability in the Raised-Ge-Source TFET

Author

Damrongplasit, Nattapol ; Sung Hwan Kim ; Tsu-Jae King Liu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA

Volume

34

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

184

Lastpage

186

Abstract

The impact of random dopant fluctuations (RDF) on the performance of an optimized TFET design comprising a raised germanium (Ge) source region is investigated via 3-D TCAD simulation. The RDF within the source region results in degraded subthreshold swing and lower turn-on voltage for the raised-Ge-source TFET design. In addition, drain-induced barrier tunneling is mitigated with the raised source design. An optimized raised-Ge-source TFET is projected to provide for lower energy operation at frequencies up to 500 MHz when compared with an ideal MOSFET.

Keywords

elemental semiconductors; field effect transistors; germanium; 3D TCAD simulation; Ge; MOSFET; RDF; drain-induced barrier tunneling; germanium source region; optimized TFET design; raised-source TFET; random dopant fluctuation induced variability; Doping; Logic gates; MOSFET circuits; Resource description framework; Semiconductor process modeling; Transistors; Tunneling; Germanium (Ge); TFET variability; random dopant fluctuations (RDF); tunnel field-effect transistors (TFET); tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2235404

Filename

6412713