Title :
Study of Random Dopant Fluctuation Induced Variability in the Raised-Ge-Source TFET
Author :
Damrongplasit, Nattapol ; Sung Hwan Kim ; Tsu-Jae King Liu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
Abstract :
The impact of random dopant fluctuations (RDF) on the performance of an optimized TFET design comprising a raised germanium (Ge) source region is investigated via 3-D TCAD simulation. The RDF within the source region results in degraded subthreshold swing and lower turn-on voltage for the raised-Ge-source TFET design. In addition, drain-induced barrier tunneling is mitigated with the raised source design. An optimized raised-Ge-source TFET is projected to provide for lower energy operation at frequencies up to 500 MHz when compared with an ideal MOSFET.
Keywords :
elemental semiconductors; field effect transistors; germanium; 3D TCAD simulation; Ge; MOSFET; RDF; drain-induced barrier tunneling; germanium source region; optimized TFET design; raised-source TFET; random dopant fluctuation induced variability; Doping; Logic gates; MOSFET circuits; Resource description framework; Semiconductor process modeling; Transistors; Tunneling; Germanium (Ge); TFET variability; random dopant fluctuations (RDF); tunnel field-effect transistors (TFET); tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2235404
