• DocumentCode
    1182360
  • Title

    Low threshold, large To injection laser emission from (InGa)As quantum dots

  • Author

    Kirstaedter, N. ; Ledentsov, Nikolay N. ; Grundmann, Marius ; Bimberg, Dieter ; Ustinov, V.M. ; Ruvimov, S.S. ; Maximov, M.V. ; Kop´ev, P.S. ; Alferov, Zh.I. ; Richter, Ulrike ; Werner, Philipp ; Gosele, U. ; Heydenreich, J.

  • Author_Institution
    Inst. fur Festkorperphys., Tech. Univ. Berlin
  • Volume
    30
  • Issue
    17
  • fYear
    1994
  • fDate
    8/18/1994 12:00:00 AM
  • Firstpage
    1416
  • Lastpage
    1417
  • Abstract
    Low threshold, large To injection laser emission via zero-dimensional states in (InGa)As quantum dots is demonstrated. The dots are formed due to a morphological transformation of a pseudomorphic In0.5Ga0.5As layer. Laser diodes are fabricated with a shallow mesa stripe geometry
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; (InGa)As quantum dots; In0.5Ga0.5As; characteristic temperature; injection laser; laser diodes; low threshold laser; morphological transformation; pseudomorphic In0.5Ga0.5As layer; shallow mesa stripe; zero-dimensional states;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940939
  • Filename
    326309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1182360