Title :
High speed, ultralow noise, tensile strained InGaAlAs MQW lasers emitting at 1300 nm for optical communication and microwave applications
Author :
Wang, Zhen ; Darby, D.B. ; Whitney, P. ; Flanders, D.
Author_Institution :
Lasertron, Burlington, MA
fDate :
8/18/1994 12:00:00 AM
Abstract :
Tensile strained InGaAlAs multiquantum well lasers emitting at 1300 nm have been developed by using a ridge waveguide structure. The lasers demonstrate >20 GHz modulation bandwidth and very low relative intensity noise of -150 dBm/Hz. 10 dB improvement in optical link loss has been observed compared to previously reported results for microwave lasers in the InGaAsP system
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; microwave links; optical communication equipment; optical links; optical losses; optical modulation; optical waveguides; semiconductor device noise; semiconductor lasers; 1300 micron; 20 GHz; InGaAlAs; high speed ultralow noise lasers; intensity noise; microwave lasers; modulation bandwidth; optical communication; optical link loss; ridge waveguide; tensile strained InGaAlAs MQW lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940974
