Title :
High power COD-free operation of 0.98 μm InGaAs/GaAs/InGaP lasers with noninjection regions near the facets
Author :
Sagawa, Masakazu ; Hiramoto, Kiyohisa ; Toyonaka, Takahiro ; Shinoda, Kazuma ; Uomi, K.
Author_Institution :
Hitachi Ltd., Tokyo
fDate :
8/18/1994 12:00:00 AM
Abstract :
The authors demonstrate the catastrophic-optical-damage-free high-output-power operation of 0.98 μm InGaAs/InGaP/GaAs buried-ridge-structure lasers with non-injection regions near the facets. A maximum output power of 466 mW and fundamental operation at 100 mW were achieved
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser tuning; semiconductor lasers; 0.98 mum; 100 mW; 466 mW; InGaAs-GaAs-InGaP; InGaAs/GaAs/InGaP lasers; buried-ridge-structure lasers; catastrophic-optical-damage-free high-output-power operation; facets; fundamental operation; high power COD-free operation; maximum output power o; non-injection regions; noninjection regions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940970
