Title :
0.85 μm bottom-emitting vertical-cavity surface-emitting laser diode arrays grown on AlGaAs substrates
Author :
Kohama, Y. ; Ohiso, Y. ; Kurokawa, Takashi
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa
fDate :
8/18/1994 12:00:00 AM
Abstract :
The first 0.85 μm 8×8 bottom-emitting vertical-cavity surface emitting laser diodes (VCSELs) have been grown on AlGaAs substrates. Their characteristics are the same as those of VCSELs grown on GaAs substrate. The authors have also fabricated 8×8 independently addressable VCSEL arrays which exhibited good lasing characteristics and uniform threshold current density
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; laser cavity resonators; semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; 0.85 mum; AlGaAs; AlGaAs substrates; AlGaAs-GaAs MQW lasers; GaAs; VCSEL arrays; VCSELs; bottom-emitting; good lasing characteristics; independently addressable; surface-emitting laser diode arrays; uniform threshold current density; vertical-cavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940926
