Title :
Proposed GaAs IMPATT device structure for D-band applications
Author_Institution :
Arbeitsbereich Hochfrequenztech., Tech. Univ. Hamburg-Harburg
fDate :
9/15/1994 12:00:00 AM
Abstract :
A GaAs double drift IMPATT device structure for applications in D-band is proposed which exhibits high efficiencies at relatively high impedance levels. Computer simulations using a full hydrodynamic transport model with two additional energy balance equations for accurate modelling of impact ionisation show that under realistic thermal considerations, output powers up to 400 mW should be obtainable around 150 GHz
Keywords :
III-V semiconductors; IMPATT diodes; gallium arsenide; impact ionisation; semiconductor device models; 150 GHz; 400 mW; D-band applications; GaAs; double drift IMPATT device structure; energy balance equations; full hydrodynamic transport model; impact ionisation; impedance levels; output powers; thermal considerations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941097
