• DocumentCode
    1182687
  • Title

    Fabrication of electroabsorption optical modulators using laser disordered GaInAs/GaInAsP multiquantum well structures

  • Author

    Lullo, G. ; McKee, Adam ; Bryce, A.C. ; Button, C. ; Marsh, John H.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ.
  • Volume
    30
  • Issue
    19
  • fYear
    1994
  • fDate
    9/15/1994 12:00:00 AM
  • Firstpage
    1623
  • Lastpage
    1625
  • Abstract
    Electroabsorption optical modulators have been fabricated on GaInAs/GaInAsP multiquantum well structures whose bandgap had been increased by laser photoabsorption-induced disordering. Modulation depths of 20 dB have been obtained in material which has been bandgap blue shifted by as much as 120 nm, while samples shifted by 80 nm gave depths as high as 27 dB
  • Keywords
    III-V semiconductors; electro-optical devices; electroabsorption; energy gap; gallium arsenide; indium compounds; optical modulation; optical workshop techniques; semiconductor quantum wells; GaInAs-GaInAsP; GaInAs/GaInAsP multiquantum well structures; bandgap blue shift; electroabsorption optical modulators; fabrication; laser photoabsorption-induced disordering; modulation depths;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941086
  • Filename
    326347
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1182687