Title :
Fabrication of electroabsorption optical modulators using laser disordered GaInAs/GaInAsP multiquantum well structures
Author :
Lullo, G. ; McKee, Adam ; Bryce, A.C. ; Button, C. ; Marsh, John H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ.
fDate :
9/15/1994 12:00:00 AM
Abstract :
Electroabsorption optical modulators have been fabricated on GaInAs/GaInAsP multiquantum well structures whose bandgap had been increased by laser photoabsorption-induced disordering. Modulation depths of 20 dB have been obtained in material which has been bandgap blue shifted by as much as 120 nm, while samples shifted by 80 nm gave depths as high as 27 dB
Keywords :
III-V semiconductors; electro-optical devices; electroabsorption; energy gap; gallium arsenide; indium compounds; optical modulation; optical workshop techniques; semiconductor quantum wells; GaInAs-GaInAsP; GaInAs/GaInAsP multiquantum well structures; bandgap blue shift; electroabsorption optical modulators; fabrication; laser photoabsorption-induced disordering; modulation depths;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941086
