DocumentCode :
118279
Title :
Palladium coated Cu wire: A robust material for die to die Cu WB interconnect
Author :
Descartin, Allen M. ; Zhang XiaoLong ; Li Jun
Author_Institution :
PSD (Packaging Solution Dev.), Freescale Semicond. (China) Ltd., Tianjin, China
fYear :
2014
fDate :
12-15 Aug. 2014
Firstpage :
186
Lastpage :
190
Abstract :
Die to die interconnection in wirebonding process these days is just common in particular to the mature packages using Gold (Au) wire as mean for interconnection. With the intense market competition to deliver a much competitive cost of the products more manufacturers, sub-contractors and even IDM (integrated device manufacturing) are now inclined with the use of Copper (Cu) wire as an alternative option. The use of Cu wire found to be even better than Au, because of its high thermal conductivity, great electrical property and importantly low cost value. However, actual application of Cu wire in wirebonding process also has its limitations such its inherent material hardness and oxidation that pose a great challenge and concern for most of the manufactures. In this paper it will tackle and discuss on how those challenges are being mitigated. Different types of wire was evaluated such the Palladium (Pd) coated Cu wire and Bare Cu wire that aims to match & satisfy the requirements of a multiple die package which has a die to die interconnection. The interconnection method is by means of the BSOB (bond-stitch-on-ball) commonly known also as reverse bonding. Ball bump formation is essential for the successful stitch bond and the type of wire to use considering that the ball bump tip surface after the bump formation will expose the inner Cu material as an effect of the shear motion of capillary during bump cutting motion thus easy to oxidize, so a different bump cutting mode or technique was studied and found can help reduced or control the oxidation with the right type of wire such as the Pd coated Cu wire.
Keywords :
copper alloys; electronics packaging; interconnections; lead bonding; palladium alloys; thermal conductivity; BSOB; IDM; Pd-Cu; ball bump formation; ball bump tip surface; bond-stitch-on-ball; bump cutting motion; capillary shear motion; die to die copper WB interconnect; electrical property; gold wire; integrated device manufacturing; low cost value; material hardness; multiple die package; oxidation; palladium coated copper wire; thermal conductivity; wirebonding process; Bonding; Copper; Materials; Oxidation; Reliability; Surface treatment; Wires; Bond-stitch-on-ball (BSOB); Pd coated Cu wire; bump cutting motion; interbond connection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location :
Chengdu
Type :
conf
DOI :
10.1109/ICEPT.2014.6922633
Filename :
6922633
Link To Document :
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