Title :
Structural properties of free-standing (In,Ga)(As,N) alloys
Author :
Zoppi, L. ; Peressi, M. ; Tosolini, M.
Author_Institution :
Dipt. di Fisica Teorica, Univ. di Trieste, Italy
Abstract :
The role of average composition and local compositional fluctuations on the structural properties of Ga1-yInyAs1-xNx quaternary alloys and related ternary alloys was investigated by means of accurate density functional pseudopotential calculations. For the quaternary alloy, the authors focus particularly on the case with x=0.5 and y=0.5. They study the different anion-cation bond length distributions and the macroscopic average structural parameters.
Keywords :
III-V semiconductors; density functional theory; gallium arsenide; gallium compounds; indium compounds; ternary semiconductors; wide band gap semiconductors; InGaAsN; anion-cation bond length; density functional pseudopotential calculation; quaternary alloys; ternary alloys;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20040891
