Title :
Effects of electron irradiation on photoluminescence from GaInNAs/GaAs multiple quantum wells subject to thermal annealing
Author :
Pavelescu, E.-M. ; Dumitrescu, M. ; Jouhti, T. ; Gheorghiu, A. ; Baltateanu, N. ; Pessa, M.
Author_Institution :
Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland
Abstract :
Electron irradiation of a 1.3-μm GaInNAs/GaAs quantum-well heterostructure, grown by molecular beam epitaxy and subsequently subjected to rapid thermal annealing, is found to induce much stronger photoluminescence than that observed for an identical as-grown sample upon annealing. Annealing of the irradiated sample also causes an additional spectral blue-shift, reduces alloy potential energy fluctuations at the conduction band minimum, and narrows spectral linewidths. These irradiation-related phenomena are accompanied by a discernable change in X-ray diffraction features upon annealing, which indicate a change in quantum well alloy composition or structure.
Keywords :
III-V semiconductors; X-ray diffraction; conduction bands; electron beam effects; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; rapid thermal annealing; semiconductor growth; semiconductor quantum wells; spectral line shift; 1.3 mum; GaINAs-GaAs; GaInNAs/GaAs multiple quantum wells; X-ray diffraction; alloy potential energy fluctuations; conduction band minimum; electron irradiation; irradiation-related phenomena; molecular beam epitaxy; narrows spectral linewidth; photoluminescence; quantum well alloy composition; quantum-well heterostructure; rapid thermal annealing; spectral blue-shift;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20040879