Title :
SCR ESD protection with reduced trigger voltage
Author :
Nikolaidis, T. ; Papadas, C.
Author_Institution :
ISD S.A., Athens, Greece
fDate :
4/3/2003 12:00:00 AM
Abstract :
A novel silicon controlled rectifier (SCR) electrostatic discharge (ESD) protection compatible with the advanced deep submicron triple well CMOS technologies is presented. By forward biasing the p-well/cathode junction, while keeping the n-well floating during ESD, the SCR trigger and holding voltages coincide at ∼1 V. This value can be increased by a composite SCR/diode string circuit.
Keywords :
CMOS integrated circuits; electrostatic discharge; protection; thyristor applications; trigger circuits; 1 V; RC trigger network; SCR ESD protection; composite SCR/diode string circuit; deep submicron triple well CMOS technologies; electrostatic discharge protection; floating n-well; forward biasing; holding voltages; p-well/cathode junction; reduced trigger voltage; silicon controlled rectifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030405
