Title :
2.1 A/mm current density AlGaN/GaN HEMT
Author :
Chini, A. ; Coffie, R. ; Meneghesso, G. ; Zanoni, E. ; Buttari, D. ; Heikman, S. ; Keller, S. ; Mishra, U.K.
Author_Institution :
Dept. of Inf. Eng. & INFM, Univ. of Padova, Italy
fDate :
4/3/2003 12:00:00 AM
Abstract :
The electrical performance of high current density AlGaN/GaN HEMTs is reported. 2 × 75 μm × 0.7 μm devices grown on sapphire substrates showed current densities up to 2.1 A/mm under 200 ns pulse condition. RF power measurements at 8 GHz and VDS=15 V exhibited a saturated output power of 3.66 W/mm with a 47.8% peak PAE.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device measurement; wide band gap semiconductors; 15 V; 2.1 A/mm current density; 200 ns; 8 GHz; Al0.34Ga0.66N-GaN; Al2O3; AlGaN/GaN HEMT; RF power measurements; electrical performances; microwave power capability; peak PAE; pulse condition; sapphire substrate; saturated output power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030382
