• DocumentCode
    1183040
  • Title

    2.1 A/mm current density AlGaN/GaN HEMT

  • Author

    Chini, A. ; Coffie, R. ; Meneghesso, G. ; Zanoni, E. ; Buttari, D. ; Heikman, S. ; Keller, S. ; Mishra, U.K.

  • Author_Institution
    Dept. of Inf. Eng. & INFM, Univ. of Padova, Italy
  • Volume
    39
  • Issue
    7
  • fYear
    2003
  • fDate
    4/3/2003 12:00:00 AM
  • Firstpage
    625
  • Lastpage
    626
  • Abstract
    The electrical performance of high current density AlGaN/GaN HEMTs is reported. 2 × 75 μm × 0.7 μm devices grown on sapphire substrates showed current densities up to 2.1 A/mm under 200 ns pulse condition. RF power measurements at 8 GHz and VDS=15 V exhibited a saturated output power of 3.66 W/mm with a 47.8% peak PAE.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device measurement; wide band gap semiconductors; 15 V; 2.1 A/mm current density; 200 ns; 8 GHz; Al0.34Ga0.66N-GaN; Al2O3; AlGaN/GaN HEMT; RF power measurements; electrical performances; microwave power capability; peak PAE; pulse condition; sapphire substrate; saturated output power;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030382
  • Filename
    1194147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1183040