DocumentCode :
1183083
Title :
Reliability considerations of hot-carrier induced degradation in analogue nMOSFET amplifier
Author :
Kurachi, Ikuo ; Forbes, L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR
Volume :
30
Issue :
19
fYear :
1994
fDate :
9/15/1994 12:00:00 AM
Firstpage :
1568
Lastpage :
1570
Abstract :
A successful implementation of substrate current and gain degradation models for an nMOSFET amplifier is demonstrated. The substrate current has to be taken into consideration in order to predict the drain conductance degradation. It is shown that the Vgs bias point for the nMOSFET amplifier is very limited when reliability is taken into consideration
Keywords :
CMOS integrated circuits; amplifiers; circuit reliability; hot carriers; linear integrated circuits; CMOS; analogue nMOSFET amplifier; bias point; drain conductance degradation; gain degradation models; hot-carrier induced degradation; reliability; substrate current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19941090
Filename :
326386
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1183083
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