Title :
Low threshold, high power and long lifetime InGaAsN/GaAs lasers
Author :
Peng, S. ; Laine, N. ; Konttinen, J. ; Jouhti, T. ; Pessa, M.
Author_Institution :
Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland
Abstract :
4 μm stripe ridge waveguide InGaAsN lasers were processed. Pulsed (10 μs, 1% duty) emission was up to 240 mW at 20°C and 20 mW at 120°C. The emission wavelength is around 1260 nm at RT. The threshold is 15 mA at 20°C, corresponding to a threshold current density of 313 A/cm2. For CW operation, the lasers show a very low threshold of 23 mA and the maximum output was up to 40 mW for a 1200 μm length chip at RT. All the emission described was kink-free and single-mode. The laser with broad area (40 μm stripe width) processing using the same material has been working under CW operation at constant current (80% of maximum output) for more than 15 500 device-hours at 30°C and is still working well.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; optical pulse generation; quantum well lasers; ridge waveguides; waveguide lasers; 10 mus; 120 degC; 1200 mum; 1260 nm; 15 mA; 20 degC; 20 mW; 23 mA; 240 mW; 30 degC; 40 mW; 400 mum; InGaAsN-GaAs; InGaAsN/GaAs lasers; broad area processing; continuous-wave operation; high power lasers; kink-free emission; long lifetime lasers; low threshold lasers; pulsed emission; single-mode emission; stripe ridge waveguide lasers;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20040884
