High-frequency performance of triple quantum well GaInNAs/GaAs ridge waveguide lasers emitting at 1.35 μm

Author

Martinez, A. ; Sallet, V. ; Jahan, D. ; Provost, J.G. ; Landreau, J. ; Le Gouezigou, O. ; Dagens, B. ; Ferlazzo, L. ; Harmand, J.C. ; Ramdane, A.

Author_Institution

CNRS-Lab. de Photonique et de Nanostructures, Marcoussis, France

Volume

151

Issue

5

fYear

2004

Firstpage

429

Lastpage

432

Abstract

Static performances and high-frequency characterisation of a GaInNAs/GaAs laser diode emitting at 1.35 μm are reported. Optimised molecular beam epitaxial (MBE) growth has allowed the achievement of a triple quantum well stack for improved dynamic properties. Broad area lasers exhibit a transparency current density of 642 A/cm² at 20°C under pulsed operation and a characteristic temperature T₀ of 80 K. Single-mode narrow-ridge waveguide devices emitting at 1.34 μm demonstrate a low threshold current of 26 mA under continuous wave (CW) operation at 25°C for an HR/as-cleaved cavity. The maximum output power reaches 9 mW with a slope efficiency of 0.13 W/A under CW operation. Intrinsic dynamic properties of the devices have been evaluated through relative intensity noise (RIN) measurements and small signal modulation. The dependence of the relaxation frequency on the bias current shows a slope of 0.92 GHz/mA¹2/. The evolution of the damping factor against the squared relaxation frequency gives a K factor of 0.44 ns. RIN measurements yield a record relaxation frequency of 7.4 GHz for this triple-QW device. Small signal modulation shows a 3 dB bandwidth of 9.7 GHz for this new material system, compatible with 10-Gbit/s applications.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; laser noise; molecular beam epitaxial growth; optical modulation; quantum well lasers; ridge waveguides; semiconductor device noise; semiconductor growth; semiconductor quantum wells; transparency; waveguide lasers; 1.34 mum; 1.35 mum; 10 Gbit/s; 10-Gbit/s applications; 20 degC; 25 degC; 26 mA; 7.4 GHz; 80 K; 9 mW; 9.7 GHz; GaInNAs-GaAs; GaInNAs/GaAs lasers; as-cleaved cavity; broad area lasers; continuous wave operation; damping factor; high-frequency performance; intrinsic dynamic properties; laser diode; molecular beam epitaxial growth; pulsed operation; relative intensity noise measurements; relaxation frequency; ridge waveguide lasers; signal modulation; single-mode waveguide devices; small signal modulation; transparency current density; triple quantum well laser; triple quantum well stack;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20040878

Filename

1367401