• DocumentCode
    11834
  • Title

    Ultraviolet Detector Based on \\hbox {SrZr}_{0.1} \\hbox {Ti}_{0.9}\\hbox {O}_{3} Film

  • Author

    Min Zhang ; Yu Chen ; Haifeng Zhang ; Weiyou Chen ; Kaibo Lv ; Shengping Ruan

  • Author_Institution
    State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
  • Volume
    34
  • Issue
    3
  • fYear
    2013
  • fDate
    Mar-13
  • Firstpage
    420
  • Lastpage
    422
  • Abstract
    In this letter, a nanocrystalline SrZr0.1Ti0.9 O3thin film was synthesized by sol-gel method and characterized by means of X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and UV-visible absorption spectra. Interdigitated Au electrodes were deposited on the film to fabricate metal-semiconductor-metal ultraviolet photodetector. At 5-V bias, the dark current of the device was 41 pA. Under the irradiation of 260-nm UV light, peak responsivity of 94 mA/W was achieved, which was higher than that of pure SrTiO3-based photodetectors. The higher responsivity of the SrZr0.1Ti0.9O3 device may be due to the introduction of zirconia, which would induce more oxygen vacancies. The UV/visible rejection ratio R260 nm/R380 nm was more than three orders of magnitude, indicating excellent sensitivity. The rise time and fall time of the device were 3.8 and 565 ms, respectively.
  • Keywords
    X-ray diffraction; X-ray photoelectron spectra; atomic force microscopy; dark conductivity; electrodes; gold; metal-semiconductor-metal structures; nanofabrication; nanosensors; nanostructured materials; photodetectors; semiconductor thin films; sol-gel processing; strontium compounds; thin film sensors; ultraviolet detectors; ultraviolet spectra; vacancies (crystal); visible spectra; wide band gap semiconductors; Au-SrZr0.1Ti0.9O3-Au; UV light; UV-visible absorption spectra; UV-visible rejection ratio; X-ray diffraction; X-ray photoelectron spectroscopy; atomic force microscopy; current 41 pA; dark current; electrodes; fall time; film-based ultraviolet detector; metal-semiconductor-metal ultraviolet photodetector fabrication; nanocrystalline thin film; oxygen vacancies; peak responsivity; rise time; sol-gel method; voltage 5 V; wavelength 260 nm; Absorption; Dark current; Detectors; Electrodes; Gold; Materials; Zirconium; $hbox{SrZr}_{0.1}hbox{Ti}_{0.9}hbox{O}_{3}$; Metal–semiconductor–metal (MSM) structure; ultraviolet (UV) detector;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2236072
  • Filename
    6412714