DocumentCode :
1183646
Title :
Low-frequency noise in polymer thin-film transistors
Author :
Marinov, O. ; Deen, M.J. ; Yu, J. ; Vamvounis, G. ; Holdcroft, S. ; Woods, W.
Author_Institution :
Electr. & Comput. Eng. Dept., McMaster Univ., Hamilton, Ont., Canada
Volume :
151
Issue :
5
fYear :
2004
Firstpage :
466
Lastpage :
472
Abstract :
The low-frequency noise (LFN) properties of the polymer field effect transistors (PFETs) using polymer semiconducting material are investigated and discussed in terms of the charge carrier transport. Results obtained from several research groups are summarised. A general trend of proportionality between noise power density and the DC power applied to the PFET channel is observed in the data from publications. This trend implies that the mobility fluctuation in the PFET is the dominant noise source.
Keywords :
carrier mobility; circuit noise; field effect transistors; polymer films; semiconductor device noise; thin film transistors; DC power; PFET channel; charge carrier transport; low-frequency noise; mobility fluctuation; noise power density; noise source; polymer field effect transistors; polymer semiconducting material; polymer thin-film transistors;
fLanguage :
English
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2409
Type :
jour
DOI :
10.1049/ip-cds:20040916
Filename :
1367446
Link To Document :
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