DocumentCode :
1183836
Title :
Ligth from silicon [LED]
Author :
Coffa, Salvatore
Author_Institution :
STMicroelectronics, Catania, Italy
Volume :
42
Issue :
10
fYear :
2005
Firstpage :
44
Lastpage :
49
Abstract :
This paper discusses the current efforts to develop an electrically powered silicon laser for the fabrication of light emitting diodes (LED). Researchers have been pushing two strategies in their quest to get light out of silicon. One scheme is based on a curious effect called quantum confinement, which reduces silicon´s momentum problem and increases the probability that injected electrons will produce photons. The other scheme sidesteps silicon´s bandgap problems by having another material, embedded within the silicon device, emit the light. This paper proposes a combination of both techniques to produce light emitters that operate at room temperature with a controllable tradeoff between high efficiency and long lifetime. A key advantage of this approach is that the color of the light emitted depends on the rare-earth ions used. Unfortunately, this approach produces low light output because the maximum output power is limited by how densely the device can be packed with rare-earth ions. Nevertheless, researchers are confident that, within a few years, an electrically driven silicon laser will become a reality.
Keywords :
elemental semiconductors; light emitting diodes; semiconductor lasers; silicon; III-V semiconductors; IntelCorp; LED; electrically powered silicon laser; exotic materials; light emitters; microprocessors; optoelectronics; quantum confinement; rare earth ions; silicon; silicon chip; silicon-based laser; Electrons; Light emitting diodes; Lighting control; Optical device fabrication; Photonic band gap; Potential well; Power generation; Power lasers; Silicon devices; Temperature control;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/MSPEC.2005.1515960
Filename :
1515960
Link To Document :
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