Systematic distortion analysis for MOSFET integrators with use of a new MOSFET model

Author

Groenewold, Gert ; Lubbers, Waldemar J.

Author_Institution

Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands

Volume

41

Issue

9

fYear

1994

fDate

9/1/1994 12:00:00 AM

Firstpage

569

Lastpage

580

Abstract

Distortion in MOSFET-based (fixed-capacitance) continuous-time integrators is analyzed. To make the analysis general, the integrators are subdivided into four classes. Almost all the possible MOSFET integrators fall into one of these classes, the rest is mixed class. It is shown that integrators from the same class have the same distortion characteristics. A new method to describe and measure distortion is introduced. Measurement results for the four classes are presented, and for some classes they are explained with a simple MOSFET model. As not all results can be explained this way, a new, highly accurate MOSFET model is introduced. A hint at designing optimal MOSFET´s is given. Finally, it is explained how the distortion characteristics of stages with different MOSFET´s that all contribute to distortion can be determined

Keywords

MOS integrated circuits; active networks; electric distortion; insulated gate field effect transistors; integrating circuits; linear integrated circuits; semiconductor device models; MOSFET integrators; MOSFET model; continuous-time integrators; distortion characteristics; distortion measurement; fixed-capacitance integrators; optimal MOSFETs; systematic distortion analysis; Distortion measurement; Dynamic range; Filters; Integrated circuit measurements; Intermodulation distortion; MOSFET circuits; Noise level; Nonlinear distortion; Signal processing; Tunable circuits and devices;

fLanguage

English

Journal_Title

Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on

Publisher

ieee

ISSN

1057-7130

Type

jour

DOI

10.1109/82.326583

Filename

326583