Analysis of current injection efficiency of separate-confinement-heterostructure quantum-film lasers

Author

Hirayama, Hideki ; Miyake, Yasunari ; Asada, Masahiro

Author_Institution

Tokyo Inst. of Technol., Japan

Volume

28

Issue

1

fYear

1992

fDate

1/1/1992 12:00:00 AM

Firstpage

68

Lastpage

74

Abstract

Current injection efficiency, i.e. the proportion of current into the active region to total current, is analyzed for separate confinement heterostructure (SCH) quantum film lasers. It is shown that the current injection efficiency changes stepwise with the active layer thickness. and is larger for lower injected carrier density and deeper quantum well. Comparison is made between step-, parabolic-GRIN-, and linear-GRIN-SCH structures. The efficiency of linear-GRIN-SCH is the highest for the same well depth. Threshold current density is discussed for these SCH structures, taking into account the current injection efficiency and the optical loss due to the carrier leakage to the optical confinement layers

Keywords

gradient index optics; laser theory; semiconductor junction lasers; SCH; active layer thickness; active region; carrier leakage; current injection efficiency; diode lasers; injected carrier density; linear-GRIN-SCH structures; optical confinement layers; optical loss; parabolic-GRIN; separate-confinement-heterostructure quantum-film lasers; step-GRIN-structures; threshold current density; total current; well depth; Carrier confinement; Laser transitions; Optical films; Optical losses; Poisson equations; Potential well; Quantum well lasers; Radiative recombination; Semiconductor lasers; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.119499

Filename

119499