DocumentCode :
1184325
Title :
Observation of highly nondegenerate four-wave mixing in 1.5 μm traveling-wave semiconductor optical amplifiers and estimation of nonlinear gain coefficient
Author :
Kikuchi, Kazuro ; Kakui, Motoki ; Zah, Chung-en ; Lee, Tien-Pei
Author_Institution :
Dept. of Electron. Eng., Tokyu Univ., Japan
Volume :
28
Issue :
1
fYear :
1992
fDate :
1/1/1992 12:00:00 AM
Firstpage :
151
Lastpage :
156
Abstract :
Nondegenerate four-wave mixing is measured in the 1.5 μm traveling-wave semiconductor optical amplifier medium as a function of the pump-probe detuning frequency ranging from a few GHz to 400 GHz. It is found that two different sources are responsible for the four-wave mixing: the carrier density modulation and the nonlinear gain effect. The latter is clearly observed when the detuning frequency increases above 100 GHz. The nonlinear gain coefficient ε, which induces a gain grating through the pump-probe beating, is estimated to be 1.75×10-23 m3. The change in the real refractive index associated with the nonlinear gain effect, which generates an index grating, is negligibly small. The relaxation time involved in the nonlinear gain effect is found to be less than 0.3 ps. These results support the role of the spectral hole burning rather than the carrier heating in the nonlinear gain effect
Keywords :
carrier density; diffraction gratings; multiwave mixing; optical hole burning; optical pumping; semiconductor junction lasers; 0.3 ps; 1 to 400 GHz; 1.5 micron; IR; carrier density modulation; detuning frequency; diode lasers; gain coefficient; gain grating; highly nondegenerate four-wave mixing; index grating; nonlinear gain coefficient; nonlinear gain effect; pump-probe beating; pump-probe detuning frequency; real refractive index; relaxation time; spectral hole burning; traveling-wave semiconductor optical amplifiers; Charge carrier density; Four-wave mixing; Frequency; Gratings; Nonlinear optics; Optical mixing; Optical pumping; Optical scattering; Semiconductor optical amplifiers; Stimulated emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.119509
Filename :
119509
Link To Document :
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