Study on the preparation of aluminum nitride with high thermal conductivity

Author

Zhao Dongliang ; Gao Ling

Author_Institution

13th Res. Inst., Sci. & Technol. of ASIC Lab., CETC, Shijiazhuang, China

fYear

2014

fDate

12-15 Aug. 2014

Firstpage

493

Lastpage

495

Abstract

In this paper, aluminum nitride ceramic with high thermal conductivity was prepared by gas sintering using nano-particle Y₂O₃ as sintering aids. When the content of nano-particle Y₂O₃ was 2-4%, the sintering temperature was 1810°C and the holding time was 3 hours, the thermal conductivity of aluminum nitride ceramic could be reached 264.5 W/m·K The aluminum nitride ceramic with high thermal conductivity, that could substitute BeO, will be preferred to using in the power devices.

Keywords

III-V semiconductors; aluminium compounds; power semiconductor devices; sintering; thermal conductivity; yttrium compounds; AlN; aluminum nitride ceramic; aluminum nitride preparation; gas sintering; holding time; nanoparticle yttrium oxide; power devices; sintering temperature; temperature 1810 degC; thermal conductivity; time 3 hour; Aluminum nitride; Ceramics; Conductivity; Grain boundaries; III-V semiconductor materials; Temperature; Thermal conductivity; aluminum nitride; sintering aids; sintering temperature; thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology (ICEPT), 2014 15th International Conference on

Conference_Location

Chengdu

Type

conf

DOI

10.1109/ICEPT.2014.6922703

Filename

6922703