UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications

Author

Meyerson, Bernard S.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

80

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1592

Lastpage

1608

Abstract

The fundamental chemical principles underlying ultra-high-vacuum chemical vapor deposition (UHV CVD) are described in this overview. A variety of unique devices and structures, e.g. high-speed graded-bandgap heterojunction bipolar transistors and n-type resonant tunneling diodes, are discussed. The role of fundamental interface chemistry in making such structures possible is considered

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; resonant tunnelling devices; reviews; semiconductor growth; semiconductor materials; silicon; tunnel diodes; vapour phase epitaxial growth; Si; Si:Ge alloys; UHV/CVD growth; VPE; device applications; fundamental chemical principles; high-speed graded-bandgap heterojunction bipolar transistors; interface chemistry; n-type resonant tunneling diodes; physics; ultra-high-vacuum chemical vapor deposition; Chemical technology; Chemical vapor deposition; Chemistry; Costs; Epitaxial growth; Physics; Semiconductor films; Silicon alloys; Substrates; Surface contamination;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.168668

Filename

168668