DocumentCode
1184439
Title
A New Method to Improve Tradeoff Performance for Advanced Power MOSFETs
Author
Vershinin, Konstantin ; Moens, Peter ; Bauwens, Filip ; Narayanan, E. M Sankara ; Tack, Marnix
Author_Institution
Emerging Technol. Res. Center, De Montfort Univ., Leicester
Volume
30
Issue
4
fYear
2009
fDate
4/1/2009 12:00:00 AM
Firstpage
416
Lastpage
418
Abstract
In this letter, a new way of operating a split-gate vertical LOCOS MOSFET based on the depletion of the drift region by MOS capacitors is proposed. By using auxiliary bias on the split-gate electrode of the device, optimum drift-region charge can be increased to reduce its specific on-resistance. Theoretical investigation reveals that nearly 25% reduction in the on-state resistance can be achieved. If an additional bias is used on the split-gate electrode during on-state, a further improvement can be observed.
Keywords
MOS capacitors; oxidation; power MOSFET; MOS capacitors; optimum drift-region charge; power MOSFET; split-gate electrode; split-gate vertical LOCOS MOSFET; Power MOSFETs; power semiconductor devices;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2014473
Filename
4797848
Link To Document