Title :
A New Method to Improve Tradeoff Performance for Advanced Power MOSFETs
Author :
Vershinin, Konstantin ; Moens, Peter ; Bauwens, Filip ; Narayanan, E. M Sankara ; Tack, Marnix
Author_Institution :
Emerging Technol. Res. Center, De Montfort Univ., Leicester
fDate :
4/1/2009 12:00:00 AM
Abstract :
In this letter, a new way of operating a split-gate vertical LOCOS MOSFET based on the depletion of the drift region by MOS capacitors is proposed. By using auxiliary bias on the split-gate electrode of the device, optimum drift-region charge can be increased to reduce its specific on-resistance. Theoretical investigation reveals that nearly 25% reduction in the on-state resistance can be achieved. If an additional bias is used on the split-gate electrode during on-state, a further improvement can be observed.
Keywords :
MOS capacitors; oxidation; power MOSFET; MOS capacitors; optimum drift-region charge; power MOSFET; split-gate electrode; split-gate vertical LOCOS MOSFET; Power MOSFETs; power semiconductor devices;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2014473
