Atomic layer epitaxy of III-V compounds: chemistry and applications

Author

Usui, Akira

Author_Institution

NEC Corp., Ibaraki, Japan

Volume

80

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1641

Lastpage

1653

Abstract

Atomic layer epitaxy (ALE) of III-V compounds is addressed, with particular focus on ALE by chloride source gases of group III elements and hybrids of group V elements. A self-limiting growth mechanism in ALE is the most significant advantage over other epitaxial methods. To realize this mechanism, selections of source gases and the reactor gases and the reactor design are described. The chemistry and growth kinetics of ALE, which also provide interesting information for understanding other vapor phase epitaxy (VPE) processes, are discussed, and a model of the self-limiting growth mechanism for chloride ALE is proposed. As a promising application of ALE, the growth of fine structures using sidewall epitaxy and selective area growth is demonstrated. Prospects for the future are briefly discussed

Keywords

III-V semiconductors; atomic layer epitaxial growth; reviews; semiconductor growth; ALE; III-V compounds; atomic layer epitaxy; chemistry; chloride source gases; fine structures; growth kinetics; reactor design; reactor gases; selective area growth; self-limiting growth mechanism; semiconductors; sidewall epitaxy; Atomic layer deposition; Chemical vapor deposition; Chemistry; Epitaxial growth; Gallium arsenide; Gases; III-V semiconductor materials; Inductors; Molecular beam epitaxial growth; Zinc compounds;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.168671

Filename

168671