Title :
Optical second-harmonic generation from unbiased single Ga1-x AlxAs quantum wells with symmetric structures
Author :
Lue, Juh-Tzeng ; Lo, Kuang-Yao ; Tzeng, Chin-Ching
Author_Institution :
Dept. of Phys., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
1/1/1992 12:00:00 AM
Abstract :
The nonlinear optical susceptibilities of various quantum-well Ga 1-xAlxAs compounds grown by molecular beam epitaxy were measured by pumping with a Q-switched and mode-locked Nd:YAG laser. The contribution of second-harmonic waves from the bulk nonlinear susceptibility and the electrical dipole sheet in the quantum well was calculated separately. The measured second-harmonic reflectivity decreases as the silicon doping concentration increases and its angular variation follows the Bloembergen and Pershan theory. Both the experimental and theoretical results indicate that the electron gas and dipole sheet in the unbiased single quantum wells have a negligible effect on the second-order nonlinear generation
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; nonlinear optical susceptibility; optical harmonic generation; optical pumping; reflectivity; semiconductor quantum wells; Bloembergen and Pershan theory; Ga1-xAlxAs; Q-switched; SHG; SQW; Si; YAG:Nd; YAl5O12:Nd; bulk nonlinear susceptibility; doping concentration; electrical dipole sheet; electron gas; mode-locked Nd:YAG laser; molecular beam epitaxy; nonlinear optical susceptibilities; optical pumping; second-harmonic generation; second-harmonic reflectivity; second-harmonic waves; second-order nonlinear generation; semiconductors; symmetric structures; unbiased single quantum wells; Laser excitation; Laser mode locking; Laser theory; Molecular beam epitaxial growth; Nonlinear optics; Optical pumping; Pump lasers; Q measurement; Quantum well lasers; Reflectivity;
Journal_Title :
Quantum Electronics, IEEE Journal of
