An Analytical Method to Extract the Physical Parameters of a Solar Cell From Four Points on the Illuminated $J{-}V$ Curve

For a variety of solar cells, it is shown that the single exponential J-V model parameters, namely - ideality factor eta, parasitic series resistance R _s, parasitic shunt resistance R _sh, dark current J ₀, and photogenerated current J _ph can be extracted simultaneously from just four simple measurements of the bias points corresponding to V _oc, ~ 0.6V _oc, J _sc, and ~ 0.6J _sc on the illuminated J-V curve, using closed-form expressions. The extraction method avoids the measurements of the peak power point and any dJ/dV (i.e., slope). The method is based on the power law J-V model proposed recently by us.