Title :
Study on strain in InGaN-based multijunction solar cell
Author :
Rahman, Md Arifur ; Islam, Md Rafiqul
Author_Institution :
Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol. (KUET), Khulna, Bangladesh
Abstract :
In case of MJSC residual strain is induced due to the change in lattice constants in different layers. So far our knowledge efficiency of multijunction solar cell (MJSC) has not been studied considering the strain effect on the energy bandgap of subcells. In this paper, we have analytically studied residual strain in different MJSC structures using multilayered strain model. Three structures are investigated to realize the structure-dependent state of strain in MJSC. The results obtained from the present study demonstrate that the strain induced in MJSC depends not only on the numbers of subcells but also on the position of subcells, window, tunnel, and BSF layers as well as their thicknesses. The influence of strain found more in the structure indicated by MJSC-3 compared to the structures MJSC-2, and MJSC-1.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; lattice constants; solar cells; wide band gap semiconductors; InGaN; energy bandgap; lattice constants; multijunction solar cell; multilayered strain model; residual strain; strain effect; Junctions; Lattices; Photonic band gap; Photovoltaic cells; Strain; Substrates; Back Surface Field (BSF); Multi-Junction Solar Cell (MJSC); Strain; Tunnel junction; Window layer;
Conference_Titel :
Electrical Information and Communication Technology (EICT), 2013 International Conference on
Conference_Location :
Khulna
Print_ISBN :
978-1-4799-2297-0
DOI :
10.1109/EICT.2014.6777843
