DocumentCode :
1185049
Title :
Semiconductor optical amplifier gain anisotropy: confinement factor against material gain
Author :
Wang, W. ; Allaart, K. ; Lenstra, D.
Author_Institution :
Dept. of Phys. & Astron., Vrije Univ., Amsterdam, Netherlands
Volume :
40
Issue :
25
fYear :
2004
Firstpage :
1602
Lastpage :
1603
Abstract :
It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier could not be the main reason for the gain anisotropy. Instead, the intrinsic material gain difference for TE/TM polarised light can well account for this anisotropy and its dependence on pump current.
Keywords :
semiconductor optical amplifiers; TE-TM mode confinement factors; TE-TM polarised light; bulk semiconductor optical amplifier; gain anisotropy; intrinsic material gain difference; pump current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20046945
Filename :
1368456
Link To Document :
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