Title :
Laser induced oxidation for growth of ultrathin gate oxide
Author :
Singh, R. ; Paily, R. ; DasGupta, A. ; DasGupta, N. ; Misra, P. ; Kukreja, L.M.
Author_Institution :
Dept. of Electr. Eng., IIT Madras, Chennai, India
Abstract :
A novel technique for the growth of ultrathin SiO2 at room temperature using a pulsed laser has been demonstrated. It is observed that, after an initial high growth rate, the oxide thickness reduces with time and the quality of the oxide improves. The results of our experiments show that this technique can be used to grow high quality ultrathin SiO2 films with excellent control suitable for ULSI MOSFETs.
Keywords :
CMOS integrated circuits; MOS capacitors; ULSI; current density; dielectric thin films; leakage currents; oxidation; pulsed laser deposition; silicon compounds; 293 to 298 K; SiO2; ULSI MOSFET; high quality ultrathin SiO2 films; laser induced oxidation; pulsed laser deposition; ultrathin gate oxide growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046763
