Title :
A new interconnection/transition method using bumping-bridge structure for 1-level package of RF MEMS devices
Author :
Lei Chen ; Wei Xu ; Deyang Yan ; Cheng Zhao ; Yi Wang ; Yue Sun
Author_Institution :
Sch. of Phys. Sci. & Technol., Yangzhou Univ., Yangzhou, China
Abstract :
A novel 1-level interconnection/transition method for radio frequency micro-electronic-mechanic system (RF MEMS) devices is proposed in this paper. Using bumping-bridge structure which is composed of a chip substrate, a coplanar waveguide (CPW) transmission line fabricated on the substrate and a group of metal bumps set on the ends of the CPW line, this method combines the advantages of both flip-chip and through-silicon via (TSV) techniques. The results of the finite element method (FEM) analysis show that this interconnection/ transition structure has good characteristics of return loss and insertion loss over a broad frequency range compared with both TSV and wire-bonding structures.
Keywords :
coplanar waveguides; finite element analysis; flip-chip devices; lead bonding; micromechanical devices; radiofrequency interconnections; three-dimensional integrated circuits; 1-level interconnection-transition method; 1-level package; CPW transmission line; FEM analysis; RF MEMS devices; TSV technique; bumping-bridge structure; chip substrate; coplanar waveguide transmission line; finite element method; flip-chip technique; insertion loss; interconnection-transition method; metal bumps; radiofrequency microelectronic-mechanic system devices; return loss; through-silicon via technique; wire-bonding structures; Coplanar waveguides; Flip-chip devices; Insertion loss; Micromechanical devices; Radio frequency; Substrates; Through-silicon vias; FEM; RF MEMS; TSV; bumping-bridge; interconnection; transition;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICEPT.2014.6922727
