Title :
Temperature-dependent hydrogen sensing characteristics of a Pd/oxide/Al0.24Ga0.76As high electron mobility transistor
Author :
Cheng, C.C. ; Tsai, Y.Y. ; Lin, K.W. ; Chen, H.I. ; Hsu, W.-H. ; Hong, C.-W. ; Liu, W.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
Abstract :
For enhancing hydrogen detecting ability, a high-performance hydrogen sensor based on a high electron mobility transistor structure by utilising a Pd/oxide/Al0.24Ga0.76As MOS structure is fabricated and investigated. At different temperatures, hydrogen-sensing characteristics of the studied device under steady- and transition-state with different concentration hydrogen gases are measured. Even at an extremely low hydrogen concentration of 4.3 ppm H2/air, the current modulation can be found significantly. Furthermore, in comparison with other FET-type hydrogen sensors, under 9970 ppm H2/air, the studied device exhibits a much shorter response time of 10.95 s.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; gallium arsenide; gas sensors; high electron mobility transistors; hydrogen; palladium; 10.95 s; FET type hydrogen sensors; H2; Pd-AlGaAs; Pd-oxide-AI0.24Ga0.76As MOS structure; high electron mobility transistor; high-performance hydrogen sensor; hydrogen concentration; hydrogen detection; hydrogen gases; temperature dependent hydrogen sensing properties;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046833
