DocumentCode
1185456
Title
High power superluminescent diode source
Author
Goldberg, L. ; Mehuys, D.
Author_Institution
Naval Res. Lab., Washington, DC
Volume
30
Issue
20
fYear
1994
fDate
9/29/1994 12:00:00 AM
Firstpage
1682
Lastpage
1684
Abstract
A high power superluminescent tapered GaAlAs amplifier source is described which produces 165 mW of broadband, diffraction limited emission, and 470 mW when seeded by a conventional low power SLD. A maximum of 252 mW was transmitted through a singlemode fibre
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; light sources; 165 to 470 mW; GaAlAs; broadband diffraction limited emission; high power type; superluminescent diode source; tapered GaAlAs amplifier source;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941141
Filename
328478
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