Title :
High power superluminescent diode source
Author :
Goldberg, L. ; Mehuys, D.
Author_Institution :
Naval Res. Lab., Washington, DC
fDate :
9/29/1994 12:00:00 AM
Abstract :
A high power superluminescent tapered GaAlAs amplifier source is described which produces 165 mW of broadband, diffraction limited emission, and 470 mW when seeded by a conventional low power SLD. A maximum of 252 mW was transmitted through a singlemode fibre
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; light sources; 165 to 470 mW; GaAlAs; broadband diffraction limited emission; high power type; superluminescent diode source; tapered GaAlAs amplifier source;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941141
