Self Consistent Field method with damped oscillation for nano device

As CMOS technology progresses, device dimensions have been scaled down into the nanometer regime and classical physics failing to characterize the nanoscale devices as quantum mechanics start to play an important role in their characteristics. Modeling Quantum transport is being very significant for rigorous performance analysis of nano devices and simulation plays an important role in the field of nano device modeling. The most widely accepted method for simulation of nano devices is Self Consistent Field (SCF) method which uses Non-Equilibrium Green´s Function (NEGF) formalism self consistently with Poisson solver equation. The NEGF formalism provides a rigorous description of quantum transport in nanoscale devices but heavy in computation. Now to reduce the computational burden a supervised algorithm in the updating procedure of SCF method is proposed in this paper. It reduces the computational burden drastically and to show the superiority a comparison in simulating DGMOSFET by traditional SCF and our proposed algorithm is provided.