Title :
High performance strained MQW lasers at 1.31 μm by MOVPE using arsine generator system
Author :
Mircea, A. ; Kazmierski, C. ; Leprince, L.
fDate :
9/29/1994 12:00:00 AM
Abstract :
For safety reasons an arsine generator system (ASGS), operating on demand, was used instead of arsine cylinders as the source for MOCVD. Excellent compensated strained multiquantum well (S-MQW) laser devices were realised for the first time with this generator. The threshold current density for infinite cavity length is 84 A/cm2 per well. This value is among the best values reported for this type of structure
Keywords :
laser transitions; optical workshop techniques; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.3 micron; MOCVD; MOVPE; arsine generator system; multiquantum well laser devices; strained MQW lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941130
