• DocumentCode
    1185469
  • Title

    High performance strained MQW lasers at 1.31 μm by MOVPE using arsine generator system

  • Author

    Mircea, A. ; Kazmierski, C. ; Leprince, L.

  • Volume
    30
  • Issue
    20
  • fYear
    1994
  • fDate
    9/29/1994 12:00:00 AM
  • Firstpage
    1681
  • Lastpage
    1682
  • Abstract
    For safety reasons an arsine generator system (ASGS), operating on demand, was used instead of arsine cylinders as the source for MOCVD. Excellent compensated strained multiquantum well (S-MQW) laser devices were realised for the first time with this generator. The threshold current density for infinite cavity length is 84 A/cm2 per well. This value is among the best values reported for this type of structure
  • Keywords
    laser transitions; optical workshop techniques; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.3 micron; MOCVD; MOVPE; arsine generator system; multiquantum well laser devices; strained MQW lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941130
  • Filename
    328479
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1185469