Title :
Dynamic linewidth of tunneling injection laser
Author :
Yoon, Hee-Sung ; Sun, H.C. ; Bhattacharya, P.K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
fDate :
9/29/1994 12:00:00 AM
Abstract :
The dynamic linewidth of the recently demonstrated tunnelling injection laser is investigated. A significantly smaller dynamic linewidth is measured for this laser in comparison to the separate confinement heterostructure laser. A lower gain compression coefficient for this laser, deduced from measurements of the linewidth enhancement factor and the photon lifetime, is mainly responsible for reducing its dynamic linewidth, owing to the suppression of hot carrier effects by the tunnelling injection mechanism
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; spectral line breadth; tunnelling; InGaAs-GaAs; dynamic linewidth; gain compression coefficient; hot carrier effects suppression; linewidth enhancement factor; photon lifetime; tunneling injection laser; tunnelling injection mechanism;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941144
