Title :
Designing nanosecond high voltage pulse generators using power MOSFETs
Author :
Baker, R. Jacob ; Ward, S.T.
Author_Institution :
Dept. of Electr. Eng., Idaho Univ., Boise, ID
fDate :
9/29/1994 12:00:00 AM
Abstract :
Power MOSFETs in series are used for generating high voltage, >1 kV, pulses with nanosecond rise and fall times. The design procedures for series operation and driving power MOSFETs to attain nanosecond switching times are given. A -1500 V pulse generator is designed with a 3 ns falltime and a 15 ns risetime into a 50 Ω load
Keywords :
insulated gate field effect transistors; power transistors; pulse generators; design procedures; nanosecond high voltage pulse generators; nanosecond rise and fall times; power MOSFETs; series operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941126
