Modeling and characterization of Joule heating in metal core of TSV

Through silicon via (TSV) is the critical structure for three dimensional package technology, which provides vertical interconnections between stacking dies and interposers. However, for TSVs, there are still some reliability problems and metal core warming of TSVs is involved in most of the causes. Thus, accurate and efficient thermal modeling methods describing and quantifying metal core warming for TSVs are vital for 3D IC package designs. In this paper, we propose a new physics-based metal core warming model mainly considering Joule heating for both a single TSV and multi TSVs. Comparisons of the modeling results and the numerical analyses demonstrate that our models capture the warming in the metal cores of a maximum error of 0.27% with a large reduction of time-consuming as well as calculation resources.