Effects of interlayers in threading dislocation reduction of step-graded InGaN heteroepitaxy

Author

Khatun, S. ; Sanober, Syeda Arza ; Hossain, Md Aynal ; Islam, Md Rafiqul

Author_Institution

Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh

fYear

2014

fDate

13-15 Feb. 2014

Firstpage

1

Lastpage

5

Abstract

This paper investigates the effects of interlayers to reduce the threading dislocation density at the top surface of the epilayer in step-graded InGaN heteroepitaxy. The reaction kinetic coefficients are considered as key parameter in the dislocation reduction and calculated analytically. The reaction model has been solved numerically with different number of interlayer. A significant improvement of epilayer quality with extremely low threading dislocation densities have been evaluated with increasing the interlayer up to 4 where 8% In composition difference used for each step-graded interlayers.

Keywords

III-V semiconductors; dislocation density; gallium compounds; indium compounds; reaction kinetics theory; reaction rate constants; semiconductor epitaxial layers; wide band gap semiconductors; InGaN; epilayer; interlayers; numerical simulation; reaction kinetic coefficients; reaction model; step-graded heteroepitaxy; threading dislocation density; threading dislocation reduction; Fasteners; Gallium nitride; Kinetic theory; Mathematical model; Metals; Photovoltaic cells; Substrates; InGaN; Threading dislocation; reaction kinetic coeficient; step-graded interlayer;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Information and Communication Technology (EICT), 2013 International Conference on

Conference_Location

Khulna

Print_ISBN

978-1-4799-2297-0

Type

conf

DOI

10.1109/EICT.2014.6777885

Filename

6777885