DocumentCode
1186152
Title
A comparative study of characterization techniques for oxide reliability in flash memories
Author
Ielmini, Daniele ; Spinelli, Alessandro S. ; Lacaita, Andrea L. ; Van Duuren, Michiel J.
Author_Institution
Dipt. di Elettronica e Informazione, Politeenico di Milano, Italy
Volume
4
Issue
3
fYear
2004
Firstpage
320
Lastpage
326
Abstract
We compare two different methods for extracting the leakage distribution from accelerated data-retention experiments. It is shown that the equivalent-cell (EC) scheme, which provides a fast estimation of leakage distribution in the array, is totally accurate as compared to a more detailed analysis of single memory cells within the array. The fair agreement between the results of the two characterization schemes is explained, and advantages of the EC technique for fast reliability monitoring in Flash memories are discussed.
Keywords
cellular arrays; flash memories; integrated circuit reliability; integrated circuit testing; leakage currents; EPROM; equivalent cell scheme; failure analysis; flash memories; leakage distribution estimation; oxide reliability; reliability monitoring; reliability testing; Acceleration; Availability; Condition monitoring; Failure analysis; Flash memory; Leakage current; Microscopy; Oxidation; Statistical distributions; Testing;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2004.836719
Filename
1369192
Link To Document