Title :
High power 980 nm nonabsorbing facet lasers
Author :
Ungar, J.E. ; Oh, Ser Wah ; Chen, Jim S.
Author_Institution :
Ortel Corp., Alhambra, CA
fDate :
10/13/1994 12:00:00 AM
Abstract :
Laser diodes emitting at 0.98 μm with epitaxially grown nonabsorbing facets have been fabricated. Catastrophic facet damage is not observed at thermally limited powers as high as 500 mW. Accelerated lifetesting at 100 mW and 50°C shows the devices to have good reliability characteristics
Keywords :
reliability; semiconductor epitaxial layers; semiconductor lasers; 100 mW; 50 C; 500 mW; 980 nm; accelerated lifetesting; catastrophic facet damage; epitaxially grown nonabsorbing facets; high power lasers; laser diodes; reliability; thermally limited powers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941177
