Title :
Flash memory under cosmic and alpha irradiation
Author :
Fogle, Adam David ; Darling, Don ; Blish, Richard C., II ; Daszko, Eugene
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
Abstract :
Neutron and proton irradiation to simulate cosmic ray jeopardy were used to establish that NOR Flash memory (conventional floating polySi gate or ONO floating gate MirrorBit) soft error failure rate (cross section) is 3-5 orders of magnitude better than SRAM. Flash memory soft error rate for a given dose of alpha particle irradiation is much less than for the same dose from simulated cosmic rays.
Keywords :
CMOS memory circuits; NOR circuits; alpha-particle effects; cosmic rays; flash memories; neutron effects; CMOS memory integrated circuits; NOR flash memory; ONO floating gate MirrorBit; alpha irradiation; alpha particle irradiation; alpha particle radiation effects; conventional floating polySi gate; cosmic ray jeopardy; neutron irradiation; neutron radiation effects; proton irradiation; proton radiation effects; simulated cosmic rays; soft error failure rate; Alpha particles; Cosmic rays; Error analysis; Flash memory; Neutrons; Packaging; Protons; Random access memory; Sea measurements; Testing;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2004.834054
