Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)

Author

De Salvo, Barbara ; Gerardi, Cosimo ; Van Schaijk, Rob ; Lombardo, Salvatore A. ; Corso, Domenico ; Plantamura, Cristina ; Serafino, Stella ; Ammendola, Giuseppe ; Van Duuren, Michiel ; Goarin, Pierre ; Mei, Wan Yuet ; Van Der Jeugd, Kees ; Baron, Thierry

Author_Institution

CEA-LETI, Grenoble, France

Volume

4

Issue

3

fYear

2004

Firstpage

377

Lastpage

389

Abstract

In this paper, an overview of today´s status and progress, as well as tomorrow´s challenges and trends, in the field of advanced nonvolatile memories based on discrete traps is given. In particular, unique features of silicon nanocrystal and SONOS memories will be illustrated through original recent data. The main potentials and main issues of these technologies as candidates to push further the scaling limits of conventional floating-gate Flash devices will be evaluated.

Keywords

electron traps; flash memories; nanostructured materials; nitrogen compounds; reliability; silicon compounds; NO; SONOS memories; SiO; advanced nonvolatile memories; discrete traps; floating-gate flash devices; silicon nanocrystal memories; Application specific integrated circuits; Guidelines; Material storage; Nanocrystals; Nonvolatile memory; Production; Random access memory; SONOS devices; Silicon; Technology forecasting;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2004.837209

Filename

1369199