Title :
High luminous flux semiconductor wafer-bonded AlGaInP/GaP large-area emitters
Author :
Kish, F.A. ; Vanderwater, D.A. ; Trott, Gary R. ; Weiss, R.J.
Author_Institution :
Div. of Optoelectron., Hewlett-Packard Co., San Jose, CA
fDate :
10/13/1994 12:00:00 AM
Abstract :
Data are presented demonstrating the high luminous flux operation of large-area light-emitting diodes (LEDs) fabricated by semiconductor wafer bonding. These LEDs operating in the 600-615 nm region are shown to be capable of emitting luminous fluxes (output powers) of 84 lumen (265 mW) and 195 lumen (475 mW) under DC and pulsed operation, respectively
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; wafer bonding; 265 mW; 475 mW; 600 to 615 nm; AlGaInP-GaP; DC and pulsed operation; large-area light-emitting diodes; luminous flux; pulsed operation; semiconductor wafer bonding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941232
