DocumentCode :
1186264
Title :
Reliability study of phase-change nonvolatile memories
Author :
Pirovano, Agostino ; Redaelli, Andrea ; Pellizzer, Fabio ; Ottogalli, Federica ; Tosi, Marina ; Ielmini, Daniele ; Lacaita, Andrea L. ; Bez, Roberto
Author_Institution :
STMicroelectronics, Agrate Brianza, Italy
Volume :
4
Issue :
3
fYear :
2004
Firstpage :
422
Lastpage :
427
Abstract :
A detailed investigation of the reliability aspects in nonvolatile phase-change memories (PCM) is presented, covering the basic aspects related to high density array NVM, i.e., data retention, endurance, program and read disturbs. The data retention capabilities and the endurance characteristics of single PCM cells are analyzed, showing that data can be stored for 10 years at 110°C and that a resistance difference of two order of magnitude between the cell states can be maintained for more than 1011 programming cycles. The main mechanisms responsible for instabilities just before failure as well as for final device breakdown are also discussed. Finally, the impact of read and program disturbs are clearly assessed, showing with experimental data and simulated results that the crystallization induced during the cell read out and the thermal cross-talk due to adjacent bits programming do not affect the retention capabilities of the PCM cells.
Keywords :
cellular arrays; integrated circuit reliability; integrated memory circuits; cell read out; chalcogenides; data retention; device breakdown; high density array NVM; nonvolatile memories; phase-change memories; program disturbs; programming cycle; read disturbs; single PCM cells; thermal cross-talk; Amorphous materials; CMOS technology; Crystalline materials; Crystallization; Data analysis; Nonvolatile memory; Phase change materials; Phase change memory; Phased arrays; Throughput;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2004.836724
Filename :
1369204
Link To Document :
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