Title :
Highly reliable operation of indium tin oxide AlGaInP orange light-emitting diodes
Author :
Lin, Jen-Fin ; Wu, Meng-Chyi ; Chang, C.-M. ; Lee, B.-J. ; Tsai, Yu-Ting
Author_Institution :
Res. Inst. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
fDate :
10/13/1994 12:00:00 AM
Abstract :
Indium-tin oxide (ITO) transparent conducting films with a low resistivity of 2-3×104 Ω·cm have been introduced as a window layer in (Al0.7Ga0.3)0.5In0.5P/(Al 0.1Ga0.9)0.5 In0.5P double-heterostructure orange light-emitting diodes to obtain a uniform spatial distribution of the emission light, a good device performance and high reliability. An output power of 450 μW at 20 mA corresponding to an external quantum efficiency of 1.1% for the 620 nm emission can be achieved
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical windows; reliability; tin compounds; (Al0.7Ga0.3)0.5In0.5P -(Al0.1Ga0.9)0.5In0.5P; 1.1 percent; 20 mA; 450 muW; 620 nm; AlGaInP; ITO; ITO transparent conducting films; InSnO; double-heterostructure orange light-emitting diodes; external quantum efficiency; output power; reliability; resistivity; spatial light distribution; window layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941228
