Title :
InGaAlAs/InAlAs multiquantum well electroabsorption phase modulator module
Author :
Yoshida, Sigeru ; Tada, Yasunori ; Kotaka, I. ; Wakita, Ken
Author_Institution :
NTT Opt. Network Syst. Lab., Yokosuka
fDate :
10/13/1994 12:00:00 AM
Abstract :
A newly fabricated InGaAlAs/InAlAs multiquantum well (MQW) waveguide phase modulator module is reported. A low connector-connector insertion loss of 7.98 dB is obtained together with a wide modulation bandwidth of over 18 GHz by employing an aspherical lens and tapered microstripline. The π-driving voltage at 1.55 μm is 2.8 V for TE polarised light and the accompanying residual intensity modulation is 3.6 dB
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; modules; optical modulation; phase modulation; semiconductor quantum wells; π-driving voltage; 1.55 micron; 18 GHz; 2.8 V; 7.98 dB; InGaAlAs-InAlAs; TE polarised light; aspherical lens; connector-connector insertion loss; modulation bandwidth; multiquantum well electroabsorption phase modulator module; residual intensity modulation; tapered microstripline;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941229
