• DocumentCode
    1186285
  • Title

    Resonant-cavity-enhanced pin photodetector with 17 GHz bandwidth-efficiency product

  • Author

    Mahon, C.J. ; Thibeault, Brian J. ; Wang, Guibin ; Jiang, Wei ; Coldren, Larry A. ; Bowers, John E.

  • Volume
    30
  • Issue
    21
  • fYear
    1994
  • fDate
    10/13/1994 12:00:00 AM
  • Firstpage
    1796
  • Lastpage
    1797
  • Abstract
    The addition of a resonant optical cavity to a photodetector enhances the quantum efficiency of the detector over a narrow wavelength range. The authors have designed, fabricated, and demonstrated resonant-cavity-enhanced GaAs pin photodetectors with near-unity quantum efficiency at 812 nm and transit-limited bandwidths of ~17 GHz
  • Keywords
    III-V semiconductors; gallium arsenide; optical resonators; p-i-n photodiodes; photodetectors; 17 GHz; 812 nm; GaAs; bandwidth-efficiency product; pin photodetector; quantum efficiency; resonant optical cavity; transit-limited bandwidths;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941234
  • Filename
    328571